LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Johnson, N.; Emary, C.; Ryu, S.; Sim, H.-S.; See, P.; Fletcher, J. D.; Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A.; Pepper, M.; Janssen, T. J. B. M.; Kataoka, M.

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LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Johnson, N.; Emary, C.; Ryu, S.; Sim, H.-S.; See, P.; Fletcher, J. D.; Griffiths, J. P.; Jones, G. A. C.; Farrer, I.; Ritchie, D. A.; Pepper, M.; Janssen, T. J. B. M.; Kataoka, M.

URI: http://hdl.handle.net/11201/168441

Abstract:

[eng] Using a recent time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we develop a method to measure the longitudinal-optical-phonon emission rate of hot electrons traveling along a depleted edge of a quantum Hall bar. Comparison to a single-particle model implies the scattering mechanism involves a two-step process via an intra-Landau-level transition. We show that this can be suppressed by control of the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications.