A Simple Quasi-Static Compact Model of Bipolar ReRAM Memristive Devices

Al Chawa, Mohamad Moner; Picos, Rodrigo

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dc.contributor.author	Al Chawa, Mohamad Moner
dc.contributor.author	Picos, Rodrigo
dc.date.accessioned	2020-05-12T06:33:06Z
dc.identifier.uri	http://hdl.handle.net/11201/152298
dc.description.abstract	[eng] In this brief, we present a quasi-static compact model for bipolar ReRAM memristive devices. This model is based on a piecewise model in flux-charge space for reset and set transitions that has been extended to build a compact model of reset/set transitions for different slopes. In order to show its functionality, we use it to reproduce the behavior of a device fabricated by the CNR-IMM, MDM Laboratory. We discuss the needed parameters extraction procedure for the device. As shown in the results, the implemented model is able to capture the effects of the slope change in the ramp input signal for reset and set by using a set of technological parameters related to the device and information related to the slope of the ramp input voltage signal.
dc.format	application/pdf
dc.relation.isformatof	https://doi.org/10.1109/TCSII.2019.2915825
dc.relation.ispartof	Ieee Transactions On Circuits And Systems Ii-Express Briefs, 2019, vol. 67, num. 2, p. 390-394
dc.rights	, 2019
dc.subject.classification	53 - Física
dc.subject.other	53 - Physics
dc.title	A Simple Quasi-Static Compact Model of Bipolar ReRAM Memristive Devices
dc.type	info:eu-repo/semantics/article
dc.date.updated	2020-05-12T06:33:07Z
dc.date.embargoEndDate	info:eu-repo/date/embargoEnd/2026-12-31
dc.embargo	2026-12-31
dc.rights.accessRights	info:eu-repo/semantics/embargoedAccess
dc.identifier.doi	https://doi.org/10.1109/TCSII.2019.2915825