A Simple Quasi-Static Compact Model of Bipolar ReRAM Memristive Devices

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dc.contributor.author Al Chawa, Mohamad Moner
dc.contributor.author Picos, Rodrigo
dc.date.accessioned 2020-05-12T06:33:06Z
dc.identifier.uri http://hdl.handle.net/11201/152298
dc.description.abstract [eng] In this brief, we present a quasi-static compact model for bipolar ReRAM memristive devices. This model is based on a piecewise model in flux-charge space for reset and set transitions that has been extended to build a compact model of reset/set transitions for different slopes. In order to show its functionality, we use it to reproduce the behavior of a device fabricated by the CNR-IMM, MDM Laboratory. We discuss the needed parameters extraction procedure for the device. As shown in the results, the implemented model is able to capture the effects of the slope change in the ramp input signal for reset and set by using a set of technological parameters related to the device and information related to the slope of the ramp input voltage signal.
dc.format application/pdf
dc.relation.isformatof https://doi.org/10.1109/TCSII.2019.2915825
dc.relation.ispartof Ieee Transactions On Circuits And Systems Ii-Express Briefs, 2019, vol. 67, num. 2, p. 390-394
dc.rights , 2019
dc.subject.classification 53 - Física
dc.subject.other 53 - Physics
dc.title A Simple Quasi-Static Compact Model of Bipolar ReRAM Memristive Devices
dc.type info:eu-repo/semantics/article
dc.date.updated 2020-05-12T06:33:07Z
dc.date.embargoEndDate info:eu-repo/date/embargoEnd/2026-12-31
dc.embargo 2026-12-31
dc.rights.accessRights info:eu-repo/semantics/embargoedAccess
dc.identifier.doi https://doi.org/10.1109/TCSII.2019.2915825


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