Manifestation of electronic transport transitions in nanostructure HgTe/CdTe type III superlattice for terahertz detection

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dc.contributor.author Benchtaber, Nassima
dc.contributor.author Nafidi, Abdelhakim
dc.contributor.author Melkoud, Samir
dc.contributor.author Benaadad, Merieme
dc.contributor.author Barkissy, Driss
dc.date.accessioned 2021-02-18T08:12:36Z
dc.identifier.uri http://hdl.handle.net/11201/155155
dc.description.abstract [eng] We report here bands structure and the effective mass, in the direction of growth and in plan of HgTe (d 1 = 4.5 nm)/ CdTe(d 2 =4.8 nm) superlattice done in the envelope function formalism. We investigated Hall Effect with the help of the density of states and the Fermi level as a function of temperature. We found that temperature generated transitions from quasi bidimensional holes (Q2D) to three dimensional (3D) electrons and p type to n type conductivity respectively. When T increases, E g increases and the cut-off wavelength λ c decreases, with 5.06 μm <; λ c <; 6.3 μm and the cut-off frequency 47 THz <; f c <; 59 THz. This sample can be used as a mid infrared terahertz detector. This superlattice is better than the random alloy Hg 0.72 Cd 0.28 Te for application as infrared detector at 21.88 K. These results are a guide for the design of infrared nanostructures detectors.
dc.format application/pdf
dc.relation.isformatof https://doi.org/10.1109/ICCSRE.2019.8807707
dc.relation.ispartof IEEE , 2019, p. 1-6
dc.rights , 2019
dc.subject.classification Física
dc.subject.other Physics
dc.title Manifestation of electronic transport transitions in nanostructure HgTe/CdTe type III superlattice for terahertz detection
dc.type info:eu-repo/semantics/article
dc.date.updated 2021-02-18T08:12:36Z
dc.date.embargoEndDate info:eu-repo/date/embargoEnd/2026-12-31
dc.embargo 2026-12-31
dc.rights.accessRights info:eu-repo/semantics/embargoedAccess
dc.identifier.doi https://doi.org/10.1109/ICCSRE.2019.8807707


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