dc.contributor.author |
Benchtaber, Nassima
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dc.contributor.author |
Nafidi, Abdelhakim
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dc.contributor.author |
Melkoud, Samir
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dc.contributor.author |
Benaadad, Merieme
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dc.contributor.author |
Barkissy, Driss
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dc.date.accessioned |
2021-02-18T08:12:36Z |
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dc.identifier.uri |
http://hdl.handle.net/11201/155155 |
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dc.description.abstract |
[eng] We report here bands structure and the effective mass, in the direction of growth and in plan of HgTe (d 1 = 4.5 nm)/ CdTe(d 2 =4.8 nm) superlattice done in the envelope function formalism. We investigated Hall Effect with the help of the density of states and the Fermi level as a function of temperature. We found that temperature generated transitions from quasi bidimensional holes (Q2D) to three dimensional (3D) electrons and p type to n type conductivity respectively. When T increases, E g increases and the cut-off wavelength λ c decreases, with 5.06 μm <; λ c <; 6.3 μm and the cut-off frequency 47 THz <; f c <; 59 THz. This sample can be used as a mid infrared terahertz detector. This superlattice is better than the random alloy Hg 0.72 Cd 0.28 Te for application as infrared detector at 21.88 K. These results are a guide for the design of infrared nanostructures detectors. |
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dc.format |
application/pdf |
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dc.relation.isformatof |
https://doi.org/10.1109/ICCSRE.2019.8807707 |
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dc.relation.ispartof |
IEEE , 2019, p. 1-6 |
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dc.rights |
, 2019 |
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dc.subject.classification |
Física |
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dc.subject.other |
Physics |
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dc.title |
Manifestation of electronic transport transitions in nanostructure HgTe/CdTe type III superlattice for terahertz detection |
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dc.type |
info:eu-repo/semantics/article |
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dc.date.updated |
2021-02-18T08:12:36Z |
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dc.date.embargoEndDate |
info:eu-repo/date/embargoEnd/2026-12-31 |
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dc.embargo |
2026-12-31 |
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dc.rights.accessRights |
info:eu-repo/semantics/embargoedAccess |
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dc.identifier.doi |
https://doi.org/10.1109/ICCSRE.2019.8807707 |
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