Estimation during design phases of suitable sram cells for puf applications using separatrix and mismatch metrics

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dc.contributor.author Alheyasat, A.
dc.contributor.author Torrens, G.
dc.contributor.author Bota, S.A.
dc.contributor.author Alorda, B.
dc.date.accessioned 2024-11-29T07:46:32Z
dc.date.available 2024-11-29T07:46:32Z
dc.identifier.uri http://hdl.handle.net/11201/166921
dc.description.abstract [eng] Physically unclonable functions (PUFs) are used as low-cost cryptographic primitives in device authentication and secret key creation. SRAM-PUFs are well-known as entropy sources; nevertheless, due of non-deterministic noise environment during the power-up process, they are subject to low challenge-response repeatability. The dependability of SRAM-PUFs is usually accomplished by combining complex error correcting codes (ECCs) with fuzzy extractor structures resulting in an increase in power consumption, area, cost, and design complexity. In this study, we established effective metrics on the basis of the separatrix concept and cell mismatch to estimate the percentage of cells that, due to the effect of variability, will tend to the same initial state during power-up. The effects of noise and temperature in cell start-up processes were used to validate the proposed metrics. The presented metrics may be applied at the SRAM-PUF design phases to investigate the impact of different design parameters on the percentage of reliable cells for PUF applications.
dc.format application/pdf
dc.relation.isformatof https://doi.org/10.3390/electronics10121479
dc.relation.ispartof 2021, vol. 10, num.12
dc.rights , 2021
dc.subject.classification 621.3 - Enginyeria elèctrica. Electrotècnia. Telecomunicacions
dc.subject.other 621.3 - Electrical engineering
dc.title Estimation during design phases of suitable sram cells for puf applications using separatrix and mismatch metrics
dc.type info:eu-repo/semantics/article
dc.type info:eu-repo/semantics/
dc.date.updated 2024-11-29T07:46:33Z
dc.rights.accessRights info:eu-repo/semantics/openAccess
dc.identifier.doi https://doi.org/10.3390/electronics10121479


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